IP Library Granted Patent US 6,174,768
Granted Patent Utility
US 6,174,768 · App. 09/177,610

Dynamic random access memory cell having an improved fin-structured storage electrode and method of fabricating the same

Inventor: Yoshihiro Takaishi
Patented Case View Patent ↗
Granted: Jan 16, 2001 Filed: Oct 23, 1998
Inventor
Yoshihiro Takaishi
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 6,174,768
App. No.
09/177,610
Filed
1998-10-23
Granted
2001-01-16
Kind
A