Granted Patent
Utility
US 6,175,136 · App. 09/039,487
Method of forming CMOS device with improved lightly doped drain structure
Inventor:
Ryuichi Okamura
Patented Case
View Patent ↗
Granted: Jan 16, 2001
Filed: Mar 16, 1998
Inventor
Ryuichi Okamura
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.