Granted Patent
Utility
US 6,177,312 · App. 09/048,459
Method for removing contaminate nitrogen from the peripheral gate region of a non-volatile memory device during production of such device
Inventors:
Yuesong He, John Jianshi Wang, Toru Ishigaki, Kent Kuohua Chang, Effiong Ibok
Patented Case
View Patent ↗
Granted: Jan 23, 2001
Filed: Mar 26, 1998
Inventors
Yuesong He
John Jianshi Wang
Toru Ishigaki
Kent Kuohua Chang
Effiong Ibok
Assignees (at issue)
Advanced Micro Devices, Inc.
Fujitsu Limited
Fujitsu AMD Semiconductor Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.