Granted Patent
Utility
US 6,177,322 · App. 09/177,817
High voltage transistor with high gated diode breakdown voltage
Inventors:
Narbeh Derhacobian, Pau-Ling Chen, Hao Fang, Timothy Thurgate
Patented Case
View Patent ↗
Granted: Jan 23, 2001
Filed: Oct 23, 1998
Inventors
Narbeh Derhacobian
Pau-Ling Chen
Hao Fang
Timothy Thurgate
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.