Granted Patent
Utility
US 6,177,699 · App. 09/083,373
DRAM cell having a verticle transistor and a capacitor formed on the sidewalls of a trench isolation
Inventors:
Dung-Ching Perng, Yauh-Ching Liu
Patented Case
View Patent ↗
Granted: Jan 23, 2001
Filed: May 21, 1998
Inventors
Dung-Ching Perng
Yauh-Ching Liu
Assignee (at issue)
LSI Logic Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.