IP Library Granted Patent US 6,180,471
Granted Patent Utility
US 6,180,471 · App. 09/183,062

Method of fabricating high voltage semiconductor device

Inventors: Peter Chang, Gary Hong, Joe Ko
Patented Case View Patent ↗
Granted: Jan 30, 2001 Filed: Oct 30, 1998
Inventors
Peter Chang
Gary Hong
Joe Ko
Assignee (at issue)
United Semiconductor Corp.

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Quick Facts
Patent No.
US 6,180,471
App. No.
09/183,062
Filed
1998-10-30
Granted
2001-01-30
Kind
A