Granted Patent
Utility
US 6,180,479 · App. 09/302,454
Method of etching to form high tolerance polysilicon resistors
Inventor:
Koichi Yoshikawa
Patented Case
View Patent ↗
Granted: Jan 30, 2001
Filed: Apr 30, 1999
Inventor
Koichi Yoshikawa
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.