Granted Patent
Utility
US 6,180,538 · App. 09/426,240
Process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device using rapid-thermal-chemical-vapor-deposition
Inventors:
Arvind Halliyal, Robert B. Ogle, Kenneth Wo-Wai Au, Steven K. Park
Patented Case
View Patent ↗
Granted: Jan 30, 2001
Filed: Oct 25, 1999
Inventors
Arvind Halliyal
Robert B. Ogle
Kenneth Wo-Wai Au
Steven K. Park
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.