Granted Patent
Utility
US 6,184,072 · App. 09/571,588
Process for forming a high-K gate dielectric
Inventors:
Vidya Kaushik, Bich-Yen Nguyen, Olubunmi O. Adetutu, Christopher C. Hobbs
Patented Case
View Patent ↗
Granted: Feb 6, 2001
Filed: May 17, 2000
Inventors
Vidya Kaushik
Bich-Yen Nguyen
Olubunmi O. Adetutu
Christopher C. Hobbs
Assignee (at issue)
Motorola, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.