Granted Patent
Utility
US 6,184,084 · App. 09/263,701
Method to elimate silicide cracking for nand type flash memory devices by implanting a polish rate improver into the second polysilicon layer and polishing it
Inventors:
David Chi, Kent Kuohua Chang, Yuesong He
Patented Case
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Granted: Feb 6, 2001
Filed: Mar 5, 1999
Inventors
David Chi
Kent Kuohua Chang
Yuesong He
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.