Granted Patent
Utility
US 6,184,110 · App. 09/071,234
Method of forming nitrogen implanted ultrathin gate oxide for dual gate CMOS devices
Inventors:
Yoshi Ono, Yanjun Ma
Patented Case
View Patent ↗
Granted: Feb 6, 2001
Filed: Apr 30, 1998
Inventors
Yoshi Ono
Yanjun Ma
Assignees (at issue)
Sharp Laboratories of America, Inc.
SHARP KABUSHIKI KAISHA
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.