IP Library Granted Patent US 6,184,584
Granted Patent Utility
US 6,184,584 · App. 09/291,872

Miniaturized contact in semiconductor substrate and method for forming the same

Inventor: Masato Sakao
Patented Case View Patent ↗
Granted: Feb 6, 2001 Filed: Apr 14, 1999
Inventor
Masato Sakao
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 6,184,584
App. No.
09/291,872
Filed
1999-04-14
Granted
2001-02-06
Kind
A