IP Library Granted Patent US 6,187,630
Granted Patent Utility
US 6,187,630 · App. 09/241,526

Method for forming hemispherical silicon grains on designated areas of silicon layer

Inventors: Anchor Chen, Shih-Ching Chen
Patented Case View Patent ↗
Granted: Feb 13, 2001 Filed: Feb 1, 1999
Inventors
Anchor Chen
Shih-Ching Chen
Assignee (at issue)
United Semiconductor Corp.

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Quick Facts
Patent No.
US 6,187,630
App. No.
09/241,526
Filed
1999-02-01
Granted
2001-02-13
Kind
A