Granted Patent
Utility
US 6,190,976 · App. 09/198,763
Fabrication method of semiconductor device using selective epitaxial growth
Inventors:
Seiichi Shishiguchi, Tomoko Yasunaga
Patented Case
View Patent ↗
Granted: Feb 20, 2001
Filed: Nov 24, 1998
Inventors
Seiichi Shishiguchi
Tomoko Yasunaga
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.