IP Library Granted Patent US 6,192,510
Granted Patent Utility
US 6,192,510 · App. 09/118,860

Method of preparing a partial one-shot electron beam exposure mask and method of direct-writing patterns by use of a partial one-shot electron beam exposure mask

Inventor: Yasuhisa Yamada
Patented Case View Patent ↗
Granted: Feb 20, 2001 Filed: Jul 20, 1998
Inventor
Yasuhisa Yamada
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 6,192,510
App. No.
09/118,860
Filed
1998-07-20
Granted
2001-02-20
Kind
A