IP Library Granted Patent US 6,200,841
Granted Patent Utility
US 6,200,841 · App. 09/223,236

MOS transistor that inhibits punchthrough and method for fabricating the same

Inventor: Sang-Yong Kim
Patented Case View Patent ↗
Granted: Mar 13, 2001 Filed: Dec 30, 1998
Inventor
Sang-Yong Kim
Assignees (at issue)
Anam Semiconductor
Amkor Technology, Inc.

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Quick Facts
Patent No.
US 6,200,841
App. No.
09/223,236
Filed
1998-12-30
Granted
2001-03-13
Kind
A