Granted Patent
Utility
US 6,201,726 · App. 09/588,153
Ferroelectric memory device structure useful for preventing hydrogen line degradation
Inventor:
Thomas A. Evans
Patented Case
View Patent ↗
Granted: Mar 13, 2001
Filed: Jun 5, 2000
Inventor
Thomas A. Evans
Assignee (at issue)
RAMTRON INTERNATIONAL CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.