Granted Patent
Utility
US 6,204,533 · App. 09/089,250
Vertical trench-gated power MOSFET having stripe geometry and high cell density
Inventors:
Richard K. Williams, Wayne B. Grabowski
Patented Case
View Patent ↗
Granted: Mar 20, 2001
Filed: Jun 2, 1998
Inventors
Richard K. Williams
Wayne B. Grabowski
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.