Granted Patent
Utility
US 6,207,584 · App. 09/478,270
High dielectric constant material deposition to achieve high capacitance
Inventors:
Hua Shen, David E. Kotecki, Robert Benjamin Laibowitz, Katherine L. Saenger, Satish D. Athavale, Jenny Lian, Martin Gutsche, Yun-Yu Wang, Thomas Shaw
Patented Case
View Patent ↗
Granted: Mar 27, 2001
Filed: Jan 5, 2000
Inventors
Hua Shen
David E. Kotecki
Robert Benjamin Laibowitz
Katherine L. Saenger
Satish D. Athavale
Jenny Lian
Martin Gutsche
Yun-Yu Wang
Thomas Shaw
Assignees (at issue)
International Business Machines Corporation
Infineon Technologies North America Corp.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.