Granted Patent
Utility
US 6,207,974 · App. 09/193,507
Process for manufacture of a p-channel MOS gated device with base implant through the contact window
Inventor:
Daniel M. Kinzer
Patented Case
View Patent ↗
Granted: Mar 27, 2001
Filed: Nov 17, 1998
Inventor
Daniel M. Kinzer
Assignee (at issue)
International Rectifier Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.