Granted Patent
Utility
US 6,208,003 · App. 09/116,955
Semiconductor structure provided with a polycide interconnection layer having a silicide film formed on a polycrystal silicon film
Inventor:
Hirotomo Miura
Patented Case
View Patent ↗
Granted: Mar 27, 2001
Filed: Jul 17, 1998
Inventor
Hirotomo Miura
Assignee (at issue)
NIPPON STEEL CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.