Granted Patent
Utility
US 6,215,152 · App. 09/130,192
MOSFET having self-aligned gate and buried shield and method of making same
Inventor:
Francois Hebert
Patented Case
View Patent ↗
Granted: Apr 10, 2001
Filed: Aug 5, 1998
Inventor
Francois Hebert
Assignee (at issue)
Cree, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.