Granted Patent
Utility
US 6,222,229 · App. 09/333,123
Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability
Inventors:
Francois Hebert, Szehim Ng
Patented Case
View Patent ↗
Granted: Apr 24, 2001
Filed: Jun 14, 1999
Inventors
Francois Hebert
Szehim Ng
Assignee (at issue)
Cree, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.