Granted Patent
Utility
US 6,229,150 · App. 09/365,105
Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation and method of fabrication
Inventors:
Toru Takayama, Takaaki Baba, James S. Harris, Jr.
Patented Case
View Patent ↗
Granted: May 8, 2001
Filed: Jul 30, 1999
Inventors
Toru Takayama
Takaaki Baba
James S. Harris, Jr.
Assignee (at issue)
Matsushita Electronics Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.