Granted Patent
Utility
US 6,232,173 · App. 09/159,470
Process for forming a memory structure that includes NVRAM, DRAM, and/or SRAM memory structures on one substrate and process for forming a new NVRAM cell structure
Inventors:
Louis L. Hsu, Jack A. Mandelman, Fariborz Assaderaghi
Patented Case
View Patent ↗
Granted: May 15, 2001
Filed: Sep 23, 1998
Inventors
Louis L. Hsu
Jack A. Mandelman
Fariborz Assaderaghi
Assignee (at issue)
International Business Machines Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.