Granted Patent
Utility
US 6,232,663 · App. 08/904,630
Semiconductor device having interlayer insulator and method for fabricating thereof
Inventors:
Toshio Taniguchi, Kenji Nukui, Ibrahim K. Burki, Richard J. Huang, Simon S. Chan, Kazunori Imaoka, Kazutoshi Mochizuki
Patented Case
View Patent ↗
Granted: May 15, 2001
Filed: Aug 1, 1997
Inventors
Toshio Taniguchi
Kenji Nukui
Ibrahim K. Burki
Richard J. Huang
Simon S. Chan
Kazunori Imaoka
Kazutoshi Mochizuki
Assignees (at issue)
Fujitsu Limited
Advanced Micro Devices, Inc.
Fujitsu AMD Semiconductor Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.