Granted Patent
Utility
US 6,238,945 · App. 09/562,494
Method of making P-type group III-nitride semiconductor device having improved P contact
Inventor:
Yawara Kaneko
Patented Case
View Patent ↗
Granted: May 29, 2001
Filed: May 1, 2000
Inventor
Yawara Kaneko
Assignee (at issue)
Agilent Technologies, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.