Granted Patent
Utility
US 6,238,980 · App. 09/343,843
Method for manufacturing silicon carbide MOS semiconductor device including utilizing difference in mask edges in implanting
Inventor:
Katsunori Ueno
Patented Case
View Patent ↗
Granted: May 29, 2001
Filed: Jun 30, 1999
Inventor
Katsunori Ueno
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.