IP Library Granted Patent US 6,239,042
Granted Patent Utility
US 6,239,042 · App. 08/987,454

Process for realizing an intermediate dielectric layer for enhancing the planarity in semiconductor electronic devices

Inventors: Patrizia Sonego, Maurizio Bacchetta
Patented Case View Patent ↗
Granted: May 29, 2001 Filed: Dec 9, 1997
Inventors
Patrizia Sonego
Maurizio Bacchetta
Assignee (at issue)
SGS-Thomson Microelectronics S.A.

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Quick Facts
Patent No.
US 6,239,042
App. No.
08/987,454
Filed
1997-12-09
Granted
2001-05-29
Kind
A