Granted Patent
Utility
US 6,239,463 · App. 08/919,386
Low resistance power MOSFET or other device containing silicon-germanium layer
Inventors:
Richard K. Williams, Mohamed N. Darwish, Wayne B. Grabowski, Michael E. Cornell
Patented Case
View Patent ↗
Granted: May 29, 2001
Filed: Aug 28, 1997
Inventors
Richard K. Williams
Mohamed N. Darwish
Wayne B. Grabowski
Michael E. Cornell
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.