Granted Patent
Utility
US 6,239,490 · App. 09/021,053
P-contact for a Group III-nitride semiconductor device and method of making same
Inventors:
Norihide Yamada, Shigeru Nakagawa, Yoshifumi Yamaoka, Tetsuya Takeuchi, Yawara Kaneki
Patented Case
View Patent ↗
Granted: May 29, 2001
Filed: Feb 9, 1998
Inventors
Norihide Yamada
Shigeru Nakagawa
Yoshifumi Yamaoka
Tetsuya Takeuchi
Yawara Kaneki
Assignee (at issue)
Agilent Technologies, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.