IP Library Granted Patent US 6,258,616
Granted Patent Utility
US 6,258,616 · App. 09/083,165

Method of making a semiconductor device having a non-alloyed ohmic contact to a buried doped layer

Inventors: John E. Cunningham, Keith Wayne Goossen
Patented Case View Patent ↗
Granted: Jul 10, 2001 Filed: May 22, 1998
Inventors
John E. Cunningham
Keith Wayne Goossen
Assignee (at issue)
LUCENT TECHNOLOGIES INC.

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Quick Facts
Patent No.
US 6,258,616
App. No.
09/083,165
Filed
1998-05-22
Granted
2001-07-10
Kind
A