IP Library Granted Patent US 6,262,467
Granted Patent Utility
US 6,262,467 · App. 09/410,613

Etch barrier structure of a semiconductor device and method for fabricating the same

Inventor: Dae Hee Hahn
Patented Case View Patent ↗
Granted: Jul 17, 2001 Filed: Oct 1, 1999
Inventor
Dae Hee Hahn
Assignee (at issue)
Hyundai Electronics Industries Co. Ltd.

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Quick Facts
Patent No.
US 6,262,467
App. No.
09/410,613
Filed
1999-10-01
Granted
2001-07-17
Kind
A