Granted Patent
Utility
US 6,265,268 · App. 09/426,672
High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device
Inventors:
Arvind Halliyal, Robert B. Ogle, Hideki Komori, Kenneth Wo-Wai Au
Patented Case
View Patent ↗
Granted: Jul 24, 2001
Filed: Oct 25, 1999
Inventors
Arvind Halliyal
Robert B. Ogle
Hideki Komori
Kenneth Wo-Wai Au
Assignees (at issue)
Advanced Micro Devices, Inc.
Fujitsu Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.