Granted Patent
Utility
US 6,268,628 · App. 09/286,900
Depletion type MOS semiconductor device and MOS power IC
Inventors:
Kazuhiko Yoshida, Motoi Kudoh, Tatsuhiko Fijihira
Patented Case
View Patent ↗
Granted: Jul 31, 2001
Filed: Apr 5, 1999
Inventors
Kazuhiko Yoshida
Motoi Kudoh
Tatsuhiko Fijihira
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.