IP Library Granted Patent US 6,271,561
Granted Patent Utility
US 6,271,561 · App. 09/536,928

Method for fabricating floating gate semiconductor devices with trench isolation structures and self aligned floating gates

Inventor: Trung T. Doan
Patented Case View Patent ↗
Granted: Aug 7, 2001 Filed: Mar 27, 2000
Inventor
Trung T. Doan
Assignee (at issue)
Micron Technology, Inc.

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Quick Facts
Patent No.
US 6,271,561
App. No.
09/536,928
Filed
2000-03-27
Granted
2001-08-07
Kind
A