Granted Patent
Utility
US 6,274,451 · App. 09/429,030
Method of fabricating a gate-control electrode for an IGBT transistor
Inventors:
Nicolas Changey, Alain Petitbon, Sophie Crouzy, Eric Ranchy
Patented Case
View Patent ↗
Granted: Aug 14, 2001
Filed: Oct 29, 1999
Inventors
Nicolas Changey
Alain Petitbon
Sophie Crouzy
Eric Ranchy
Assignee (at issue)
ALSTOM Holdings
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.