Granted Patent
Utility
US 6,277,675 · App. 09/429,150
Method of fabricating high voltage MOS device
Inventor:
Ming-Tsung Tung
Patented Case
View Patent ↗
Granted: Aug 21, 2001
Filed: Oct 28, 1999
Inventor
Ming-Tsung Tung
Assignee (at issue)
WINBOND ELECTRONICS CORP.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.