IP Library Granted Patent US 6,281,079
Granted Patent Utility
US 6,281,079 · App. 09/272,968

MOS transistor in a single-transistor memory cell having a locally thickened gate oxide, and production process

Inventors: Lars Heineck, Giorgio Schweeger
Patented Case View Patent ↗
Granted: Aug 28, 2001 Filed: Mar 19, 1999
Inventors
Lars Heineck
Giorgio Schweeger
Assignee (at issue)
Infineon Technologies AG

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,281,079
App. No.
09/272,968
Filed
1999-03-19
Granted
2001-08-28
Kind
A