Granted Patent
Utility
US 6,284,013 · App. 09/508,256
Method for preparing high-purity ruthenium sputtering target and high-purity ruthenium sputtering target
Inventors:
Yuichiro Shindo, Tsuneo Suzuki
Patented Case
View Patent ↗
Granted: Sep 4, 2001
Filed: Mar 8, 2000
Inventors
Yuichiro Shindo
Tsuneo Suzuki
Assignee (at issue)
Japan Energy Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.