Granted Patent
Utility
US 6,284,039 · App. 09/417,610
Epitaxial silicon wafers substantially free of grown-in defects
Inventors:
Luciano Mule'Stagno, Lu Fei, Joseph C. Holzer, Harold W. Korb, Robert J. Falster
Patented Case
View Patent ↗
Granted: Sep 4, 2001
Filed: Oct 13, 1999
Inventors
Luciano Mule'Stagno
Lu Fei
Joseph C. Holzer
Harold W. Korb
Robert J. Falster
Assignee (at issue)
MEMC Electronic Materials, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.