IP Library › Granted Patent US 6,284,623
Granted Patent Utility
US 6,284,623 · App. 09/427,407

Method of fabricating semiconductor devices using shallow trench isolation with reduced narrow channel effect

Inventors: Peng Zhang, Richard Mann
Patented Case View Patent ↗
Granted: Sep 4, 2001 Filed: Oct 25, 1999
Inventors
Peng Zhang
Richard Mann

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Quick Facts
Patent No.
US 6,284,623
App. No.
09/427,407
Filed
1999-10-25
Granted
2001-09-04
Kind
A