Granted Patent
Utility
US 6,285,041 · App. 08/921,044
Thin-film transistor having a high resistance back channel region am) fabrication method thereof
Inventor:
Kesao Noguchi
Patented Case
View Patent ↗
Granted: Sep 4, 2001
Filed: Aug 29, 1997
Inventor
Kesao Noguchi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.