Granted Patent
Utility
US 6,285,044 · App. 09/291,499
InP-based heterojunction bipolar transistor with reduced base-collector capacitance
Inventor:
Rajaram Bhat
Patented Case
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Granted: Sep 4, 2001
Filed: Apr 14, 1999
Inventor
Rajaram Bhat
Assignee (at issue)
Telcordia Technologies, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.