Granted Patent
Utility
US 6,287,914 · App. 09/640,013
Method of forming a MISFET device with a bit line completely surrounded by dielectric
Inventors:
Hiroyuki Uchiyama, Atsushi Ogishima, Shoji Shukuri
Patented Case
View Patent ↗
Granted: Sep 11, 2001
Filed: Aug 17, 2000
Inventors
Hiroyuki Uchiyama
Atsushi Ogishima
Shoji Shukuri
Assignee (at issue)
HITACHI, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.