Granted Patent
Utility
US 6,287,916 · App. 09/731,185
Method for forming a semiconductor device using LPCVD nitride to protect floating gate from charge loss
Inventor:
Sunil Mehta
Patented Case
View Patent ↗
Granted: Sep 11, 2001
Filed: Dec 7, 2000
Inventor
Sunil Mehta
Assignee (at issue)
Lattice Semiconductor Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.