IP Library Granted Patent US 6,298,077
Granted Patent Utility
US 6,298,077 · App. 09/250,900

GaInAsP/AIGaInP laser diodes with AIGaAs type II carrier blocking layer in the waveguide

Inventor: Xiauguang He
Patented Case View Patent ↗
Granted: Oct 2, 2001 Filed: Feb 16, 1999
Inventor
Xiauguang He
Assignee (at issue)
OPTOPOWER CO., LTD.

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Quick Facts
Patent No.
US 6,298,077
App. No.
09/250,900
Filed
1999-02-16
Granted
2001-10-02
Kind
A