Granted Patent
Utility
US 6,300,658 · App. 09/368,073
Method for reduced gate aspect ration to improve gap-fill after spacer etch
Inventors:
John Jianshi Wang, Kent Kuohua Chang, Hao Fang, Lu You
Patented Case
View Patent ↗
Granted: Oct 9, 2001
Filed: Aug 3, 1999
Inventors
John Jianshi Wang
Kent Kuohua Chang
Hao Fang
Lu You
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.