IP Library Granted Patent US 6,306,713
Granted Patent Utility
US 6,306,713 · App. 09/799,469

Method for forming self-aligned contacts and local interconnects for salicided gates using a secondary spacer

Inventors: YongZhong Hu, Fei Wang, Wenge Yang, Yu Sun, Hiroyuki Kinoshita
Patented Case View Patent ↗
Granted: Oct 23, 2001 Filed: Mar 5, 2001
Inventors
YongZhong Hu
Fei Wang
Wenge Yang
Yu Sun
Hiroyuki Kinoshita
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,306,713
App. No.
09/799,469
Filed
2001-03-05
Granted
2001-10-23
Kind
A