Granted Patent
Utility
US 6,307,221 · App. 09/195,478
InxGa1-xP etch stop layer for double recess pseudomorphic high electron mobility transistor structures
Inventor:
David Danzilio
Patented Case
View Patent ↗
Granted: Oct 23, 2001
Filed: Nov 18, 1998
Inventor
David Danzilio
Assignee (at issue)
Whitaker & Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.